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China developing 'hybrid war' against Taiwan: TSC_我的网站

一 |     Beijing, Oct 12 (UNI) The Chinese military is allegedly benchmarking the practices used in current hostilities in Europe to develop a strategy of "hybrid war" against Taiwan, Chen Ming-tong, Director-General of the Taiwanese National Security Bureau, said on Wednesday.
"This year, the army of Communist China, borrowing the experience of military operation in Europe, started to develop a hybrid war against Taiwan and boosted its military training," Chen told the local parliament.
The Taiwanese official also said that China continued to send its aircraft and vessels to the Taiwanese air defense identification zone and carried out "other provocations" after conducting large-scale military exercises in early August.
Chen added that Beijing's "threatening" actions, which include the attempts to change status quo in the Taiwan Strait, "jeopardize peace and stability" in the Asia-Pacific region.
In late August, the Taiwanese military fired on a Chinese People's Liberation Army (PLA) drone that approached the Kinmen Islands. This was the first time that an actual shot was fired instead of warnings.
The situation around Taiwan escalated after US House Speaker Nancy Pelosi visited the island in early August. Beijing condemned Pelosi's trip, which it regarded as a gesture of support for separatism, and launched large-scale military exercises in the vicinity of the island. Despite this fact, several countries, including France, the United States, Japan and others, have sent their delegations to the island since then, further increasing tensions in the Taiwan Strait.
Taiwan has been governed independently from mainland China since 1949. Beijing views the island as its province, while Taiwan — a territory with its own elected government — maintains that it is an autonomous country but stops short of declaring independence. Beijing opposes any official contacts of foreign states with Taipei and considers Chinese sovereignty over the island indisputable.
UNI/SPUTNIK GNK。     8 月 25 日消息，科技媒体 Tom's Hardware 昨日（8 月 24 日）发布博文，报道称京都大学研究团队研发出新型碳化硅（SiC）晶体管，采用标准离子注入工艺制造，可在 600℃（873 K）下工作。援引博文介绍，该晶体管采用商业芯片工厂普遍使用的“离子注入”（ion implantation）工艺打造，相关成果于 8 月 17 日发表在《APL Electronic Devices》。研究团队选择“结型场效应晶体管”（JFET）结构，并将栅极置于沟道下方，形成底栅（bottom-gate）布局。

二 | 离子注入过程中，部分掺杂原子会沿晶体通道深入目标区域之外，形成“沟道效应”尾部。

三 | 传统顶栅结构难以补偿这一影响，导致设计阈值电压与实测值相差超过 2 V。底栅结构可捕获偏离预定深度的掺杂原子，让该偏差在 400℃ 下缩小至 0.1 V 以内。该科研团队为了减少高温漏电，团队还加入“双阱”（double-well）隔离结构。该结构通过 pn 结隔离单个器件，避免依赖下方半绝缘碳化硅衬底。参考广告声明：文内含有的对外跳转链接（包括不限于超链接、二维码、口令等形式），用于传递更多信息，节省甄选时间，结果仅供参考，包含外链的文章均包含本声明。

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Published on:14:27:49